Mfg Part Number: 202104-007
Alternate P/N: 202104007
NSN : 5962-01-262-2185
NIIN : 012622185
CAGE Code : 81413
Item Name : Microcircuit Memory
Here at Internet For Aviation, we have 202104-007 Microcircuit Memory from Bae Systems Information And Electronic Systems Integration I, as well as a variety of other parts from reliable manufacturers. As the only independent distributor with a No China Sourcing policy, we go to great lengths to ensure that we source responsibly when it comes to certified standard items. If you’re in need of a specific 202104-007 to aid you in your aircraft repair capabilities, simply search by NSN part number, NSN or Cage Code on our parts directory. Submit an instant RFQ and a representative will get back to you in as little as 15 minutes.
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139-359-001 | 252-293446-001 | 362213622-4 | 4014255-01 |
56S672 | 6306-1 | 6306-1J | 6306J |
7537006P14 | 808494 2 | 93446 | 93446DM |
93446PC | AM27S13DC | CC1654-007 | CC1654 007F |
D3622 | HM 1 7621 5 | HPR0M 2048 | HPROM-2048 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING794 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510204 GOVERNMENT SPECIFICATION |
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